Patent Identifier:
6020253
A new compound, tertiarybutylbis-(dimethylamino)phosphine, ((CH(3))(3) C)((CH(3))(2) N)(2) P, is used as a precursor in forming phosphorus-containing semiconductor material by chemical vapor deposition. Tertiarybutylbis-(dimethylamino)phosphine is prepared by reacting a phosphorus trihalide, PX(3), with the tertiarybutyl Grignard reagent ((CH(3))(3) C)MgX. The resultant product is treated with lithium dimethylamide reagent LiN(CH(3))(2). Tertiarybutylbis-(dimethylamino)phosphine is then recovered from the reaction mixture.