A method of forming perovskite thin films with micron-sized perovskite grains is provided. A layer of PbX2 in a solution containing a metal ion additive is applied to a structure. The structure with the PbX2 layer is annealed a first time. The PbX2 is exposed to CH3NH3X in a solvent. The structure with the exposed PbX2 layer is annealed a second time resulting in a CH3NH3PbX3 layer. X is selected from a group consisting of Cl, Br, I, CN, and SCN.
- Please contact for additional information